Journal article
Determination of X-ray flux using silicon pin diodes
- Abstract:
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Accurate measurement of photon flux from an X-ray source, a parameter required to calculate the dose absorbed by the sample, is not yet routinely available at macromolecular crystallography beamlines. The development of a model for determining the photon flux incident on pin diodes is described here, and has been tested on the macromolecular crystallography beamlines at both the Swiss Light Source, Villigen, Switzerland, and the Advanced Light Source, Berkeley, USA, at energies between 4 and ...
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(pdf, 607.7KB)
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- Publisher copy:
- 10.1107/S0909049508040429
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Authors
Funding
Bibliographic Details
- Publisher:
- International Union of Crystallography Publisher's website
- Journal:
- Journal of Synchrotron Radiation Journal website
- Volume:
- 16
- Issue:
- 2
- Pages:
- 143-151
- Publication date:
- 2009-03-01
- DOI:
- ISSN:
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0909-0495
Item Description
- Language:
- English
- Keywords:
- Subjects:
- UUID:
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uuid:e6d254ef-1c8b-4bd6-9fdd-13b8aaedb8f3
- Local pid:
- ora:5470
- Deposit date:
- 2011-06-17
Related Items
Terms of use
- Copyright holder:
- R L Owen et al
- Copyright date:
- 2009
- Notes:
- Citation: Owen, R. L. et al (2009). 'Determination of X-ray flux using silicon pin diodes', Journal of Synchrotron Radiation 16(2), 143-151. [Available at http://journals.iucr.org/s/journalhomepage.html]. © authors 2009. This article is distributed under the terms of the Creative Commmons Attribution Licence which permits use, distribution, and reproduction in any medium, provided the original authors and source are credited. For any reuse or distribution, it must be made clear to others what the licence terms of this work are. Any of these conditions can be waived if you get permission from the copyright holder.
- Licence:
- CC Attribution (CC BY)
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