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Sub-angstrom characterization of structural origin for high in-plane anisotropy in 2D GeS2

Abstract:

Materials with layered crystal structures and high in-plane anisotropy, such as black phosphorus, present unique properties and thus promise for applications in electronic and photonic devices. Recently, the layered structures of GeS2 and GeSe2 were utilized for high-performance polarization-sensitive photodetection in the short wavelength region due to their high in-plane optical anisotropy and wide band gap. The highly complex, low-symmetric (monoclinic) crystal structures are at the origin...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1021/acsnano.9b10057

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Publisher:
American Chemical Society Publisher's website
Journal:
ACS Nano Journal website
Volume:
14
Issue:
4
Pages:
4456–4462
Publication date:
2020-04-10
Acceptance date:
2020-04-10
DOI:
EISSN:
1936-086X
ISSN:
1936-0851
Language:
English
Keywords:
Pubs id:
1099884
Local pid:
pubs:1099884
Deposit date:
2020-04-13

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