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Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers

Abstract:

We demonstrate a method to realize vertically oriented Ge nanowires on Si(111) substrates. Ge nanowires were grown by chemical vapor deposition using Au nanoparticles to seed nanowire growth via a vapor-liquid-solid growth mechanism. Rapid oxidation of Si during Au nanoparticle application inhibits the growth of vertically oriented Ge nanowires directly on Si. The present method employs thin Ge buffer layers grown at low temperature less than 600 °C to circumvent the oxidation problem. By usi...

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Journal:
Nanotechnology
Volume:
21
Issue:
29
Pages:
295602-295602
Publication date:
2010-01-01
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
Source identifiers:
172767
Language:
English
Pubs id:
pubs:172767
UUID:
uuid:83d64236-c417-473b-b9ce-ed439aaa7ea9
Local pid:
pubs:172767
Deposit date:
2012-12-19

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