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High-performance two-dimensional Schottky diodes utilizing chemical vapour deposition-grown graphene-MoS2 heterojunctions

Abstract:

Heterostructures based on two-dimensional (2D) materials have attracted enormous interest as they display unique functionalities and have potential to be applied in next-generation electronics. In this report, we fabricated three types of heterostructures based on chemical vapor deposition-grown graphene and MoS2. A significant rectification was observed in the Au-MoS2-Gr heterojunction, with a rectification ratio over 2 × 104. The rectifying behavior is reproducible among nearly all 44 devic...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1021/acsami.8b13507

Authors


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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Oxford college:
Linacre College
Role:
Author
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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Oxford college:
Queens College
Role:
Author
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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Oxford college:
St Cross College
Role:
Author
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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Oxford college:
Hertford College
Role:
Author
ORCID:
0000-0001-8215-9469
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
ORCID:
0000-0003-3067-9520
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More from this funder
Funding agency for:
Warner, J
Grant:
725258
More from this funder
Funding agency for:
Warner, J
Grant:
725258
Publisher:
American Chemical Society Publisher's website
Journal:
ACS Applied Materials and Interfaces Journal website
Volume:
10
Issue:
43
Pages:
37258–37266
Publication date:
2018-10-22
Acceptance date:
2018-10-08
DOI:
EISSN:
1944-8252
ISSN:
1944-8244
Pmid:
30346128
Source identifiers:
935193
Language:
English
Keywords:
Pubs id:
pubs:935193
UUID:
uuid:7f6d4eb2-9aa9-4fd4-90f9-1bc2e026b22e
Local pid:
pubs:935193
Deposit date:
2018-11-15

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