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THz modulators and detectors based on semiconductor nanowires

Abstract:
Semiconductors nanowires have to potential to be building blocks for future nano-optoelectronic devices. We have recently demonstrated high performance THz photonic devices based on GaAs and InP nanowires. These include ultrafast optically switched modulators of THz radiation and single nanowire photoconductive detectors of THz pulses.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1109/IRMMW-THz.2017.8066874

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Oxford college:
Corpus Christi College
Role:
Author
ORCID:
0000-0002-0301-8033
Australian Research Council More from this funder
Publisher:
IEEE Publisher's website
Journal:
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Journal website
Host title:
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Publication date:
2017-10-16
Acceptance date:
2017-05-12
DOI:
ISSN:
2162-2027 and 2162-2035
Source identifiers:
809854
ISBN:
9781509060481
Pubs id:
pubs:809854
UUID:
uuid:5f2b475b-5469-49d3-a8b8-a57d9704c83a
Local pid:
pubs:809854
Deposit date:
2018-08-02

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