Conference item
The surface passivation mechanism of graphene oxide for crystalline silicon
- Abstract:
-
We have recently demonstrated that low surface recombination velocities on Si crystals are achievable from room temperature graphene oxide (GO) deposition. Intrinsic properties of this material make it an appealing candidate for surface passivation in solar cells. There is, however, very little literature on the passivation mechanisms of GO and further understanding is required. In this work we have thus studied GO/SiO2/Si interface interactions by X-ray photoelectron spectroscopy (XPS). From...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
-
-
(Accepted manuscript, 411.9KB)
-
- Publisher copy:
- 10.1109/PVSC40753.2019.8980620
Authors
Bibliographic Details
- Publisher:
- IEEE Publisher's website
- Pages:
- 1931-1934
- Publication date:
- 2020-02-06
- Acceptance date:
- 2019-04-01
- Event title:
- IEEE 46th Photovoltaic Specialists Conference (PVSC 2019)
- Event location:
- Chicago, Illinois, USA
- Event start date:
- 2019-06-16
- Event end date:
- 2019-06-21
- DOI:
- ISSN:
-
0160-8371
- EISBN:
- 9781728104942
- ISBN:
- 9781728104959
Item Description
- Language:
- English
- Keywords:
- Pubs id:
-
1098838
- Local pid:
- pubs:1098838
- Deposit date:
- 2021-01-11
Terms of use
- Copyright date:
- 2019
- Notes:
- This paper was presented at the IEEE 46th Photovoltaic Specialists Conference (PVSC 2019), Chicago, Illinois, USA, June 2019. This is the accepted manuscript version of the paper. The final version is available online from IEEE at: https://doi.org/10.1109/PVSC40753.2019.8980620
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