Journal article
Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN
- Abstract:
-
The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contact resistivity better than 10-7 Ω cm2 was obtained using a plasma treatment of 20 s at 30 W and 0.2 mbar, followed by RTA at 500 °C in argon. The I-V characteristics of the Ti/Al contacts degraded w...
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Bibliographic Details
- Journal:
- Physica Status Solidi (B) Basic Research
- Volume:
- 241
- Issue:
- 12
- Pages:
- 2820-2824
- Publication date:
- 2004-10-01
- DOI:
- ISSN:
-
0370-1972
Item Description
- Language:
- English
- Pubs id:
-
pubs:178915
- UUID:
-
uuid:25535ad2-09aa-442c-bb0c-9cdea7a97a46
- Local pid:
- pubs:178915
- Source identifiers:
-
178915
- Deposit date:
- 2013-11-17
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- Copyright date:
- 2004
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