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Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

Abstract:

The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contact resistivity better than 10-7 Ω cm2 was obtained using a plasma treatment of 20 s at 30 W and 0.2 mbar, followed by RTA at 500 °C in argon. The I-V characteristics of the Ti/Al contacts degraded w...

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Publisher copy:
10.1002/pssb.200405056

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
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Journal:
Physica Status Solidi (B) Basic Research
Volume:
241
Issue:
12
Pages:
2820-2824
Publication date:
2004-10-01
DOI:
ISSN:
0370-1972
Source identifiers:
178915
Language:
English
Pubs id:
pubs:178915
UUID:
uuid:25535ad2-09aa-442c-bb0c-9cdea7a97a46
Local pid:
pubs:178915
Deposit date:
2013-11-17

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