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The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers

Abstract:

Under certain conditions, interstitial oxygen atoms in Czochralski-grown silicon (Cz-Si) are known to hinder or completely stop dislocation motion. As a result, oxygen impurities can remarkably improve the mechanical strength of silicon wafers as they are transported and bound to dislocations. The amount of oxygen bound to dislocations - and with it the wafer's resistance to plastic deformation - is oxygen concentration, time, temperature and, importantly, thermal history dependent. It is als...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
MICROELECTRONIC ENGINEERING
Volume:
70
Issue:
1
Pages:
125-130
Publication date:
2003-10-05
DOI:
ISSN:
0167-9317
URN:
uuid:0e809b74-96c3-445f-9c0a-73eba99aea10
Source identifiers:
4522
Local pid:
pubs:4522
Language:
English
Keywords:

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