Abstract:

We present resonant femtosecond pump-probe reflectance measurements of excitons in high quality wurtzite GaN epilayers for a range of lattice temperatures and various pump intensities. From the density dependence of the excitonic bleaching we find that the Mott density is nMott ≤ 2.2 × 1019 cm-3. At 4 K we find that the exciton dynamics is dominated by trapping at defects via acoustic phonon emission on a timescale of ∼16 ps. At temperatures above 60 K we observe a much longer relaxation comp...

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